Wafer processing apparatus and wafer processing method using the same

ABSTRACT

An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.

RELATED APPLICATION

[0001] This application claims the benefit of Korean Patent ApplicationNo. 2001-12901, filed Mar. 13, 2001, the disclosure of which is herebyincorporated herein by reference in its entirety as if set forth fullyherein.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a wafer processing apparatus anda wafer processing method using the same, and more particularly, to awafer processing apparatus which can be used to form metal wiring layershaving a multi-layered structure and a wafer processing method using thesame.

[0004] 2. Description of the Related Art

[0005] As the integration density of semiconductor devices increases, itis necessary to introduce metal wiring layers having a multi-layeredstructure into circuits. Because metal wiring layers transmit electricalsignals, it is advantageous to use an economical material for the metalwiring layers which has low electrical resistance and high reliability.To meet these demands, aluminum is widely used for the material of themetal wiring layers. It is also advantageous to electrically connectsuch aluminum wiring layers in a way that is reliable, economical, andhas low electrical resistance. Metal wiring layers are typicallyconnected by a contact hole, which is a contact between a lower deviceand an upper wiring layer, or a via hole, which is a contact between alower metal wiring layer and an upper aluminum wiring layer. Aluminum ispreferably used as the metal to fill a contact hole or a via holebecause it is economical and has superior conductivity.

[0006] To obtain superior electrical characteristics and fillingcharacteristics when filling a contact hole or a via hole with aluminum,a variety of processing techniques have been developed. The processesfor filling a contact hole or a via hole typically include steps such aschemical vapor deposition (CVD), physical vapor deposition (PVD), heattreatment, an oxidation process, and an etching process. Various clustertool type wafer processing apparatuses have been developed to performthe steps for filling a contact hole or via hole.

[0007] However, a conventional integrated cluster tool type waferprocessing apparatus typically does not have every facility required forperforming all the processes for filling a contact hole or a via hole ona wafer. Accordingly, a vacuum break inevitably occurs during thecontact hole or via hole filling processes. If a wafer is exposed to theatmosphere during the processes for filling a contact hole or a viahole, the exposed surface of the wafer may be contaminated by air, watervapor, or particles in the air, which may adversely affect theperformance and yield of the resulting semiconductor device. Inaddition, the distance the wafer moves is increased significantlybecause the wafer is moved into a processing equipment or processingatmosphere which is not installed in the wafer processing apparatusduring the contact hole or via hole filling process and through put isdecreased.

SUMMARY OF THE INVENTION

[0008] According to certain embodiments of the invention, a waferprocessing apparatus includes: a transfer chamber which is exhaustibleand has a plurality of gate valves; a plurality of vacuum processingchambers, each of which is connectable to the transfer chamber via oneof the gate valves; and a load lock chamber which is exhaustible and isconnectable to a first gas feed line for feeding an oxygen-based gasinto the load lock chamber.

[0009] In some embodiments, a second gas feed line for feeding an inertgas into the load lock chamber is connectable to the load lock chamber.

[0010] The plurality of vacuum processing chambers may include achemical vapor deposition chamber, a physical vapor deposition chamber,and a heat treatment chamber.

[0011] The heat treatment chamber may include a pedestal which can beraised and lowered and has a supporting surface for supporting a wafer.A cover is installed above the pedestal so that a predetermined spacebetween the supporting surface and the cover can be adjusted by raisingand lowering the pedestal. A heating apparatus for heating the wafer isinstalled at the pedestal and the cover.

[0012] The plurality of vacuum processing chambers may include a Ti/TiNlayer exclusive chamber for forming a Ti layer, a TiN layer, or a mixedlayer of Ti and TiN. The plurality of vacuum processing chambers mayinclude an etching chamber. The etching chamber may be a plasma etchingchamber using a radio frequency power source. Alternatively, the etchingchamber may be an electron cyclotron resonance etching chamber.

[0013] In certain embodiments, a wafer processing apparatus according tothe invention includes an oxygen atmosphere chamber which can beconnected to the transfer chamber via one of the gate valves. In someembodiments, the oxygen atmosphere chamber includes a third gas feedline for feeding an oxygen-based gas into the oxygen atmosphere chamberand a fourth gas feed line for feeding an inert gas into the oxygenatmosphere chamber.

[0014] The wafer processing apparatus according to the invention mayfurther include: a degas chamber which is situated between the load lockchamber and the transfer chamber and is used for preheating a waferreceived from the load lock chamber and for outgassing; and a coolingchamber which is situated between the load lock chamber and the transferchamber and is used for cooling the wafer received from the transferchamber.

[0015] According to embodiments of the invention, a wafer processingapparatus includes: a transfer chamber which is exhaustible and has aplurality of gate valves; a plurality of vacuum processing chambers,each of which is connected to the transfer chamber via one of the gatevalves; an oxygen atmosphere chamber which can be connected to thetransfer chamber via one of the gate valves and is connectable to afirst gas feed line for feeding an oxygen-based gas into the oxygenatmosphere chamber; and a load lock chamber which is exhaustible.

[0016] According to embodiments of the invention, a transfer chamber isconnected to a plurality of processing chambers via a plurality of gatevalves. A load lock chamber is connected to the transfer chamber, and afirst gas feed line is connected to the load lock chamber for feeding anoxygen-based gas to the load lock chamber. A predetermined layer isformed in one of the plurality of vacuum processing chambers. Thepredetermined layer is oxidized on the wafer in the load lock chamber.The load lock chamber and the transfer chamber are exhaustible.

[0017] The step of oxidizing the predetermined layer on the wafer may beperformed in an oxygen-based gas atmosphere including at least one ofoxygen (O₂), ozone (O₃), or dinitrogen monoxide (N₂O). The step ofoxidizing the predetermined layer on the wafer may be performed in amixed gas atmosphere of an inert gas and an oxygen-based gas includingat least one of oxygen (O₂), ozone (O₃), or dinitrogen monoxide (N₂O).The step of oxidizing the predetermined layer on the wafer may beperformed at a temperature between about room temperature and about 200°C.

[0018] According to embodiments of the invention, a first layer isformed on a predetermined portion of the wafer to define a contact holeor via hole region before the step of forming the predetermined layer,and the predetermined layer is formed on the first layer such that thepredetermined layer does not cover the contact hole region.

[0019] According to embodiments of the invention, a transfer chamber isconnected to a plurality of vacuum processing chambers via a pluralityof gate valves. An oxygen atmosphere chamber is connected to thetransfer chamber via one of the plurality of gate valves. A first gasfeed line to the oxygen chamber for feeding an oxygen-based gas into theoxygen chamber. A load lock chamber is connected to the transfer chamberfor facilitating the transfer of a wafer to and from the transferchamber. The transfer chamber and the load lock chamber is exhaustible.

[0020] According to certain embodiments of the invention, exposure tothe atmosphere during processing and during the formation of metalwiring layers is eliminated. Therefore, contamination of the wafer maybe reduced and throughput may be enhanced.

BRIEF DESCRIPTION OF THE DRAWINGS

[0021]FIG. 1 is a schematic diagram of an integrated in situ clustertool type wafer processing apparatus according to embodiments of thepresent invention;

[0022]FIGS. 2A and 2B are schematic diagrams of a heat treatment chamberinstalled in an integrated cluster tool type wafer processing apparatusaccording to embodiments of the present invention;

[0023]FIG. 3 is a schematic diagram of a load lock chamber installed inan integrated cluster tool type wafer processing apparatus according toembodiments of the present invention;

[0024]FIG. 4 is a schematic diagram of an integrated cluster tool typewafer processing apparatus according to embodiments of the presentinvention;

[0025]FIG. 5 is a schematic diagram of an integrated cluster tool typewafer processing apparatus according to embodiments of the presentinvention;

[0026]FIG. 6 is a schematic diagram of an oxygen atmosphere chamberinstalled in an integrated cluster tool type wafer processing apparatusaccording to embodiments of the present invention;

[0027]FIG. 7 is a flowchart illustrating a wafer processing methodaccording to method embodiments of the present invention; and

[0028]FIG. 8 is a flowchart illustrating a wafer processing methodaccording to method embodiments of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0029] The present invention now will be described more fullyhereinafter with reference to the accompanying drawings, in whichvarious embodiments of the invention are shown. This invention may,however, be embodied in many different forms and should not be construedas limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the invention to thoseskilled in the art. In the drawings, the relative sizes of elements maybe exaggerated for clarity. It will be understood that when an elementis referred to as being “connected” or “connectable to” another element,it can be directly connected to the other element or interveningelements may also be present.

[0030]FIG. 1 is a schematic diagram illustrating an integrated in situcluster tool type wafer processing apparatus according to embodiments ofthe present invention. Referring to FIG. 1, a wafer processing apparatusaccording to an embodiment of the present invention includes a transferchamber 10 having a plurality of gate valves 22, 32, 42, 52, and 62. Awafer handling robot 14 is installed in the transfer chamber 10. Thewafer handling robot 14 includes a blade 12 for supporting a wafer. Aplurality of vacuum processing chambers 20, 30, and 40 are installedaround the transfer chamber 10, and each of the vacuum processingchambers 20, 30, and 40 is connected to the transfer chamber 10 throughone of the gate valves 22, 32, 42, 52, and 62. In FIG. 1, the vacuumprocessing chambers 20, 30, and 40 are a chemical vapor deposition (CVD)chamber, a physical vapor deposition (PVD) chamber, and a heat treatmentchamber, respectively.

[0031] The CVD chamber 20 can be used for forming a metal layer such asan aluminum layer or an aluminum alloy layer. For example, selectivemetal organic chemical vapor deposition (MOCVD) for forming an aluminumlayer can be performed in the CVD chamber 20. The CVD chamber 20includes a raw material provider (not shown) for providing an aluminumsource for providing aluminum as well as processing gases required fordeposition of an aluminum layer in the CVD chamber 20. A precursorformed of an organometallic compound, such as dimethylaluminum hydride(DMAH), trimethylamine alane (TMAA), dimethylethylamine alane (DMEAA),or methylpyrrolidine alane (MPA), may be used as the aluminum source. Abubbler type raw material provider, a vapor flow controller type rawmaterial provider, or a liquid delivery system type raw materialprovider may be used for providing the precursor to the CVD chamber 20.An inert gas, such as Ar, may be used as a dilution gas. To promote thedecomposition of the precursor, a reaction gas, such as a hydrogen (H₂)gas, may be added.

[0032] The PVD chamber 30 may be a sputtering chamber which is capableof performing direct current (DC) sputtering, DC magnetron sputtering,alternating current (AC) sputtering, or AC magnetron sputtering. Ifnecessary, a collimator may be installed in the PVD chamber 30 forperforming sputtering. The PVD chamber 30 can be used for forming awiring layer, which includes an aluminum layer or an aluminum alloylayer.

[0033] The wiring layer is thermally treated in an inert atmosphere,such as an Ar atmosphere, at a temperature of 350° C. or greater forseveral minutes and then is reflowed to fill a contact hole or via holeand planarize the wiring layer. The heat treatment chamber 40 is used toperform the reflowing process. Heat treatment for reflowing the aluminumlayer or aluminum alloy layer should be performed in a state when thesurface of the aluminum layer or aluminum alloy layer is difficult tooxidize. Thus, it is preferable that the pressure of the heat treatmentchamber 40 is low. Preferably, the heat treatment chamber is maintainedto be in a highly vacuum state having a pressure of 10⁻⁶ Torr or less.

[0034]FIGS. 2A and 2B are schematic diagrams illustrating the structureof the heat treatment chamber 40 of FIG. 1. Referring to FIGS. 2A and2B, the heat treatment chamber 40 includes a pedestal 44 having asupporting surface 44 a for supporting a wafer W. The pedestal 44 can beraised and lowered by an elevating apparatus 140. FIG. 2A illustratesthe case of the pedestal 44 in a lowered position, and FIG. 2Billustrates the case of the pedestal 44 in a raised position. The heattreatment chamber 40 includes a cover 46 which is installed above thepedestal 44 so that a predetermined space between the supporting surface44 a and the cover 46 can be adjusted depending on whether the pedestal44 is lowered or raised, respectively. A first heater 142 and a secondheater 144 are installed in the pedestal 44 and the cover 46,respectively. The first and second heaters 142 and 144 may include aresistant coil. The heat treatment chamber 40 can be exhausted using anexhaust system 49 including an exhaust pump 48.

[0035] When the wafer W is put into or taken out of the heat treatmentchamber 40, the pedestal 44 is at the lowered position. When the wafer Wis thermally treated, the pedestal 44 is at the raised position.Therefore, the predetermined space between the supporting surface 44 aand the cover 46 is closed by the pedestal 44 when the wafer W isthermally treated, and thus the temperature around the pedestal 44 isuniformly maintained.

[0036] In addition, the wafer processing apparatus according to thepresent invention includes a load lock chamber 50 as shown in FIG. 3. Incertain embodiments of the present invention, the load lock chamber 50is used for preparing a space through which a wafer can be moved betweenthe inside and outside of the wafer processing apparatus. The load lockchamber 50 may also be used for oxidizing the wafer.

[0037]FIG. 3 is a schematic diagram illustrating the structure of theload lock chamber 50. As shown in FIG. 3, the load lock chamber 50 canbe exhausted using an exhaust system 54, which includes an exhaust pump53. A first gas feed line 56 for feeding an oxygen-based gas 156 to theload lock chamber 50 and a second gas feed line 58 for feeding an inertgas 158 into the load lock chamber 50 are connected to the load lockchamber 50. O₂, O₃, or N₂O may be used as the oxygen-based gas 156supplied through the first gas feed line 56. The flow rate of gassupplied via the first and second gas feed lines 56 and 58 can becontrolled by flow regulators 151 and 153, respectively, and valves 152and 154, respectively. Mounted on a wafer carrier 150, a wafer can beeasily put into or taken out of the load lock chamber 50. A process foroxidizing the wafer is performed using the oxygen-based gas 156 suppliedvia the first gas feed line 56 in the load lock chamber 50 maintained ina vacuum state by the exhaust system 54. At this time, it is possible toperform the oxidation of the wafers mounted on the wafer carrier 150 ina batch process. The degree to which the wafer is oxidized can becontrolled by regulating the flow rate of the oxygen-based gas 156, thatis, by controlling the partial pressure of the oxygen-based gas and theexposure time.

[0038] Referring to FIG. 1, a degas chamber 70 is installed between thetransfer chamber 10 and the load lock chamber 50 for the purpose ofpreheating the wafer received from the load lock chamber 50 beforemoving the wafer to the transfer chamber 10. The degas chamber 70 isalso used for outgassing the wafer. A cooling chamber 80 is installedbetween the transfer chamber 10 and the load lock chamber 50 for thepurpose of cooling the wafer before moving the wafer to the load lockchamber 50. Load chambers 90 are buffer chambers situated between thedegas chamber 70 and the load lock chamber 50 and between the coolingchamber 80 and the load lock chamber 50. The wafer processing apparatusis controlled by a controller 92.

[0039] The wafer processing apparatus shown in FIG. 1, which includesthree vacuum processing chambers: the CVD chamber 20, the PVD chamber30, and the heat treatment chamber 40, can be efficiently used invarious processes for forming metal wiring layers such as filling acontact hole or via hole. Also, the wafer processing apparatus shown inFIG. 1 can be used in a blanket aluminum deposition process in which analuminum layer is formed on a wafer using chemical vapor deposition.

[0040]FIG. 4 is a schematic diagram illustrating the structure of anintegrated cluster tool type wafer processing apparatus according tofurther embodiments of the present invention. The same referencenumerals in FIGS. 1 and 4 represent the same elements, and thus theirdescription will be omitted.

[0041] Referring to FIG. 4, a wafer processing apparatus according tothe invention includes the CVD chamber 20, the PVD chamber 30, the heattreatment chamber 40, a Ti/TiN layer exclusive chamber 250 for forming aTi layer, a TiN layer, or a mixed layer of Ti and TiN, and an etchingchamber 260. The Ti/TiN exclusive chamber 250 and the etching chamber260 are connected to the transfer chamber 10 via gate valves 252 and262, respectively. The Ti/TiN layer exclusive chamber 250 may include aCVD chamber or a PVD chamber. The etching chamber 260 may include aplasma etching chamber using a radio frequency (RF) power source, or anelectron cyclotron resonance (ECR) etching chamber. The etching chamber260 can be used for removing a surface oxide layer formed in a contacthole or via hole.

[0042]FIG. 5 is a schematic diagram illustrating the structure of anintegrated cluster tool type wafer processing apparatus according toembodiments of the present invention. The same reference numerals inFIGS. 1, 4, and 5 represent the same element, and thus their descriptionwill not be repeated.

[0043] In addition to the vacuum processing chambers, CVD chamber 20,PVD chamber 30, heat treatment chamber 40, Ti/TiN layer exclusivechamber 250, and etching chamber 260, the wafer processing apparatusdepicted in FIG. 5 includes an oxygen atmosphere chamber 370. The oxygenatmosphere chamber 370 is connected to the transfer chamber 10 via agate valve 372.

[0044]FIG. 6 is a schematic diagram illustrating the oxygen atmospherechamber 370 of FIG. 5. As shown in FIG. 6, the oxygen atmosphere chamber370 can be exhausted by an exhaust system 354 including an exhaust pump353. A third gas feed line 356 for feeding an oxygen-based gas 456 intothe oxygen atmosphere chamber 370 and a fourth gas feed line 358 forfeeding an inert gas 458 into the oxygen atmosphere chamber 370 areconnected to the oxygen atmosphere chamber 370. The oxygen-based gas 456is supplied via the third gas feed line 356 may be O₂, O₃, or N₂O. Theflow rate of gas supplied via the third and fourth feed lines 356 and358 can be controlled by flow regulators 451 and 453, respectively, andvalves 452 and 454, respectively. A process of oxidizing a wafer may beperformed using the oxygen-based gas 456 supplied via the third gas feedline 356 in the oxygen atmosphere chamber 370 maintained in a vacuumstate by the exhaust system 354. The degree to which the wafer isoxidized can be controlled by the flow rate of the oxygen-based gas 456,that is, the partial pressure of the oxygen gas and the exposure time.

[0045]FIG. 7 is a flowchart illustrating a wafer processing methodaccording to an embodiment of the present invention. The process may beused for forming a contact hole or a via hole. For clarity and ease ofpresentation, a contact hole is referred to in the following examplewith reference to FIG. 7. A first layer is formed on a predeterminedportion of a wafer to define a contact hole region in step 510. Thefirst layer may be an interlayer dielectric layer, a monolayer formed ofa TiN layer, or a mixed layer including a TiN layer. In the case of thefirst layer being a monolayer of a TiN layer or a mixed layer includinga TiN layer, the first layer can be formed in the Ti/TiN layer exclusivechamber 250 of the wafer processing apparatus described with referenceto FIG. 4.

[0046] Next, in step 520, a predetermined layer, for example, analuminum layer or a titanium layer, is formed on the first layer usingvacuum processing chambers CVD chamber 20 or PVD chamber 30, withreference to FIG. 1. Next, in step 530, the predetermined layer isoxidized in the load lock chamber 50 described with reference to FIGS. 1and 3. To oxidize the predetermined layer, an oxygen-based gas, such asO₂, O₃, or N₂O, or a mixed gas consisting of the oxygen-based gas and aninert gas is supplied to the load lock chamber 50 so that the load lockchamber 50 is maintained at an oxygen atmosphere. The step of oxidizingthe predetermined layer may be performed at a temperature between aboutroom temperature and about 200° C. If necessary, the step of forming analuminum layer using the CVD chamber 20 or the PVD chamber 30 and thestep of reflowing a semiconductor substrate using the heat treatmentchamber 40 may be additionally performed.

[0047]FIG. 8 is a flowchart illustrating a wafer processing methodaccording to an embodiment of the present invention. The process may beused for forming a contact hole or a via hole. For clarity and ease ofpresentation, a contact hole is referred to in the following examplewith reference to FIG. 8. A first layer is formed on a predeterminedportion of a wafer so as to define a contact hole region in step 610. Asdescribed with reference to FIG. 7, the first layer may be an interlayerdielectric layer, a monolayer formed of a TiN layer, or a mixed layerincluding a TiN layer.

[0048] Next, in step 620, a predetermined layer, for example, analuminum layer or a titanium layer, is formed on the first layer usingthe CVD chamber 20 or the PVD chamber 30 installed in the waferprocessing apparatus, described with reference to FIG. 5. Next, in step630, the predetermined layer is oxidized in the oxygen atmospherechamber 370, described with reference to FIGS. 5 and 6. To oxidize thepredetermined layer, an oxygen-based gas or a mixed gas consisting of anoxygen-based gas and an inert gas is fed into the oxygen atmospherechamber 370 so that the oxygen atmosphere chamber 370 is maintained atan oxygen atmosphere. The step of oxidizing the predetermined layer maybe performed at a temperature between about room temperature and about200° C. If necessary, the step of forming an aluminum layer using theCVD chamber 20 or the PVD chamber 30 and the step of reflowing thesemiconductor substrate using the heat treatment chamber 40 may beadditionally performed.

[0049] According to some embodiments of the present invention, a waferprocessing apparatus according to the present invention includes a loadlock chamber or an oxygen atmosphere chamber which can be maintained atan oxygen-based atmosphere required for performing an oxidation process.Therefore, the wafer is not exposed to atmosphere when transferred to anoxidation apparatus. The probability of the wafer being polluted istherefore reduced and throughput may be enhanced.

[0050] The foregoing is illustrative of the present invention and is notto be construed as limiting thereof. Although a few exemplaryembodiments of this invention have been described, those skilled in theart will readily appreciate that many modifications are possible in theexemplary embodiments without materially departing from the novelteachings and advantages of this invention. Accordingly, all suchmodifications are intended to be included within the scope of thisinvention. Therefore, it is to be understood that the foregoing isillustrative of the present invention and is not to be construed aslimited to the specific embodiments disclosed, and that modifications tothe disclosed embodiments, as well as other embodiments, are intended tobe included within the scope of the invention.

What is claimed is:
 1. A wafer processing apparatus comprising: atransfer chamber having a plurality of gate valves, wherein the transferchamber is exhaustible; a plurality of vacuum processing chambers, eachof which is connectable to the transfer chamber via one of the gatevalves; a load lock chamber connectable to the transfer chamber forfacilitating transfer of a wafer to and from the transfer chamber,wherein the load lock chamber is exhaustible; and a first gas feed lineconnectable to the load lock chamber for feeding an oxygen-based gasinto the load lock chamber.
 2. The wafer processing apparatus of claim1, including a second gas feed line connectable to the load lock chamberfor feeding an inert gas into the load lock chamber.
 3. The waferprocessing apparatus of claim 1, wherein the oxygen-based gas fed intothe load lock chamber comprises at least one of oxygen (O₂), ozone (O₃),and dinitrogen monoxide (N₂O).
 4. The wafer processing apparatus ofclaim 1, wherein the plurality of vacuum processing chambers comprises achemical vapor deposition (CVD) chamber.
 5. The wafer processingapparatus of claim 1, wherein the CVD chamber is configured for formingat least one of an aluminum layer and an aluminum alloy layer.
 6. Thewafer processing apparatus of claim 1, wherein the plurality of vacuumprocessing chambers comprises a physical vapor deposition (PVD) chamber.7. The wafer processing apparatus of claim 6, wherein the PVD chamber isconfigured for forming at least one of an aluminum layer and an aluminumalloy layer.
 8. The wafer processing apparatus of claim 1, wherein theplurality of vacuum processing chambers comprises heat treatmentchamber.
 9. The wafer processing apparatus of claim 8, wherein the heattreatment chamber comprises: a pedestal which can be raised and loweredand has a supporting surface for supporting a wafer; a cover situatedabove the pedestal so that a predetermined space between the supportingsurface and the cover can be adjusted by raising and lowering thepedestal; and a heating apparatus for heating the wafer.
 10. The waferprocessing apparatus of claim 9, wherein the heating apparatus furthercomprises: a first heater connected to the pedestal; and a second heaterconnected to the cover.
 11. The wafer processing apparatus of claim 9,wherein the heating apparatus comprises a resistant coil.
 12. The waferprocessing apparatus of claim 1, wherein the plurality of vacuumprocessing chambers comprises a Ti/TiN layer exclusive chamberconfigured for forming at least one of a Ti layer, a TiN layer, and amixed layer of Ti and TiN.
 13. The wafer processing apparatus of claim12, wherein the Ti/TiN layer exclusive chamber comprises a CVD chamber.14. The wafer processing apparatus of claim 12, wherein the Ti/TiN layerexclusive chamber comprises a PVD chamber.
 15. The wafer processingapparatus of claim 1, wherein the plurality of vacuum processingchambers further comprises an etching chamber.
 16. The wafer processingapparatus of claim 15, wherein the etching chamber comprises a plasmaetching chamber using a radio frequency power source.
 17. The waferprocessing apparatus of claim 15, wherein the etching chamber comprisesan electron cyclotron resonance etching chamber.
 18. The waferprocessing apparatus of claim 1 further comprising an oxygen atmospherechamber connectable to the transfer chamber via one of the gate valves.19. The wafer processing apparatus of claim 18, wherein the oxygenatmosphere chamber comprises: a third gas feed line for feeding anoxygen-based gas into the oxygen atmosphere chamber; and a fourth gasfeed line for feeding an inert gas into the oxygen atmosphere chamber.20. The wafer processing apparatus of claim 19, wherein the oxygen-basedgas fed by the third gas feed line into the oxygen atmosphere chambercomprises oxygen (O₂), ozone (O₃), or dinitrogen monoxide (N₂O).
 21. Thewafer processing apparatus of claim 1 further comprising: a degaschamber situated between the load lock chamber and the transfer chamberand configured for preheating and outgassing a wafer received from theload lock chamber; and a cooling chamber situated between the load lockchamber and the transfer chamber and configured for cooling a waferreceived from the transfer chamber.
 22. A wafer processing apparatuscomprising: a transfer chamber and having a plurality of gate valves,wherein the transfer chamber is exhaustible; a plurality of vacuumprocessing chambers, each of which is connectable to the transferchamber via one of the gate valves; an oxygen atmosphere chamber whichis connectable to the transfer chamber via one of the gate valves; afirst gas feed line connectable to the oxygen atmosphere chamber forfeeding an oxygen-based gas into the oxygen atmosphere chamber; and aload lock chamber connectable to the transfer chamber for facilitatingtransfer of a wafer to and from the transfer chamber, wherein the loadlock chamber is exhaustible.
 23. The wafer processing apparatus of claim22, wherein a second gas feed line for feeding an inert gas into theoxygen atmosphere chamber is connectable to the oxygen atmospherechamber.
 24. The wafer processing apparatus of claim 22, wherein theoxygen-based gas fed into the oxygen atmosphere chamber comprises atleast one of oxygen (O₂), ozone (O₃), or dinitrogen monoxide (N₂O). 25.The wafer processing apparatus of claim 22, wherein the plurality ofvacuum processing chambers comprises a chemical vapor deposition (CVD)chamber.
 26. The wafer processing apparatus of claim 25, wherein the CVDchamber is configured for forming an aluminum layer or an aluminum alloylayer.
 27. The wafer processing apparatus of claim 22, wherein theplurality of vacuum processing chambers comprises a physical vapordeposition (PVD) chamber.
 28. The wafer processing apparatus of claim27, wherein PVD chamber is configured for forming an aluminum layer oran aluminum alloy layer.
 29. The wafer processing apparatus of claim 22,wherein the plurality of vacuum processing chambers comprises a heattreatment chamber.
 30. The wafer processing apparatus of claim 29,wherein the heat treatment chamber comprises: a pedestal which can beraised and lowered and has a supporting surface for supporting a wafer;a cover which is connected above the pedestal so that a predeterminedspace between the supporting surface and the cover can be adjusted byraising and lowering the pedestal; and a heating apparatus for heatingthe wafer.
 31. The wafer processing apparatus of claim 30, wherein theheating apparatus further comprises: a first heater connected to thepedestal; and a second heater connected to the cover.
 32. The waferprocessing apparatus of claim 30, wherein the heating apparatuscomprises a resistant coil.
 33. The wafer processing apparatus of claim22, wherein the plurality of vacuum processing chambers furthercomprises a Ti/TiN layer exclusive chamber for forming at least one of aTi layer, a TiN layer, and a mixed layer of Ti and TiN.
 34. The waferprocessing apparatus of claim 33, wherein the Ti/TiN layer exclusivechamber comprises a CVD chamber.
 35. The wafer processing apparatus ofclaim 33, wherein the Ti/TiN layer exclusive chamber comprises a PVDchamber.
 36. The wafer processing apparatus of claim 22, wherein theplurality of vacuum processing chambers further comprises an etchingchamber.
 37. The wafer processing apparatus of claim 36, wherein theetching chamber comprises least a plasma etching chamber using a radiofrequency power source.
 38. The wafer processing apparatus of claim 36,wherein the etching chamber comprises an electron cyclotron resonanceetching chamber.
 39. The wafer processing apparatus of claim 22 furthercomprising: a degas chamber situated between the load lock chamber andthe transfer chamber and configured for preheating and outgassing awafer received from the load lock chamber; and a cooling chambersituated between the load lock chamber and the transfer chamber andconfigured for cooling the wafer received from the transfer chamber. 40.A wafer processing method comprising: connecting a plurality of vacuumprocessing chambers to a transfer chamber by one of a plurality of gatevalves, wherein the transfer chamber is exhaustible; connecting a loadlock chamber to the transfer chamber, wherein the load lock chamber isexhaustible; connecting a first gas feed line to the load lock chamberfor feeding an oxygen-based gas to the load lock chamber; forming apredetermined layer on a wafer in one of the plurality of vacuumprocessing chambers; and oxidizing the predetermined layer on the waferin the load lock chamber.
 41. The wafer processing method of claim 40,wherein the step of oxidizing the predetermined layer on the wafer isperformed in an oxygen-based gas atmosphere comprising at least one ofoxygen (O₂), ozone (O₃), and dinitrogen monoxide (N₂O).
 42. The waferprocessing method of claim 40, wherein the step of oxidizing thepredetermined layer on the wafer is performed in a mixed gas atmosphereof an inert gas and an oxygen-based gas, wherein the oxygen-based gascomprises at least one of one of oxygen (O₂), ozone (O₃), or dinitrogenmonoxide (N₂O).
 43. The wafer processing method of claim 40, wherein thestep of oxidizing the predetermined layer on the wafer is performed at atemperature between about room temperature and about 200° C.
 44. Thewafer processing method of claim 40, wherein the predetermined layercomprises an aluminum layer.
 45. The wafer processing method of claim40, wherein the predetermined layer comprises a titanium layer.
 46. Thewafer processing method of claim 40, further comprising: forming a firstlayer on a predetermined portion of the wafer to define a contact holeregion before the step of forming the predetermined layer, wherein thepredetermined layer is formed on the first layer such that thepredetermined layer does not cover the contact hole region.
 47. Thewafer processing method of claim 46, wherein the first layer comprisesan interlayer dielectric layer.
 48. The wafer processing method of claim46, wherein the first layer comprises at least one of a monolayercomprising a TiN layer, and a mixed layer comprising a TiN layer.
 49. Awafer processing method, comprising the steps of: connecting a transferchamber to a plurality of vacuum processing chambers via a plurality ofgate valves, wherein the transfer chamber is exhaustible; connecting anoxygen atmosphere chamber to the transfer chamber via one of theplurality of gate valves; connecting a first gas feed line to the oxygenchamber for feeding an oxygen-based gas into the oxygen chamber;connecting a load lock chamber to the transfer chamber for facilitatingthe transfer of a wafer to and from the transfer chamber, wherein theload lock chamber is exhaustible; forming a predetermined layer on awafer in one of the vacuum processing chambers; and oxidizing thepredetermined layer on the wafer in the oxygen atmosphere chamber. 50.The wafer processing method of claim 49, wherein the step of oxidizingthe predetermined layer on the wafer is performed in an oxygen-based gasatmosphere comprising at least one of oxygen (O₂), ozone (O₃), anddinitrogen monoxide (N₂O).
 51. The wafer processing method of claim 49,wherein the step of oxidizing the predetermined layer on the wafer isperformed in a mixed gas atmosphere comprising an oxygen-based gascomprising at least one of oxygen (O₂), ozone (O₃), or dinitrogenmonoxide (N₂O), and an inert gas.
 52. The wafer processing method ofclaim 49, wherein the step of oxidizing the predetermined layer on thewafer is performed at a temperature between about room temperature andabout 200° C.
 53. The wafer processing method of claim 49, wherein thepredetermined layer comprises an aluminum layer.
 54. The waferprocessing method of claim 49, wherein the predetermined layer comprisesa titanium layer.
 55. The wafer processing method of claim 49, furthercomprising: forming a first layer on a predetermined portion of thewafer to define a contact hole region before the step of forming thepredetermined layer, wherein the predetermined layer is formed on thefirst layer such that the predetermined layer does not cover the contacthole region.
 56. The wafer processing method of claim 55, wherein thefirst layer comprises an interlayer dielectric layer.
 57. The waferprocessing method of claim 55, wherein the first layer comprises atleast one of a monolayer comprising a TiN layer and a mixed layercomprising a TiN layer.
 58. A wafer processing apparatus comprising: atransfer chamber having a plurality of gate valves, wherein the transferchamber is exhaustible; a plurality of vacuum processing chambers,wherein each of the plurality of vacuum processing chambers isconnectable to the transfer chamber via one of the gate valves; and aload lock chamber connectable to the transfer chamber for facilitatingtransfer of a wafer to and from the transfer chamber, wherein the loadlock chamber is exhaustible.
 59. The wafer processing apparatus of claim58, wherein the plurality of vacuum processing chambers is configuredfor processing a contact hole.
 60. The wafer processing apparatus ofclaim 58, wherein the plurality of vacuum processing chambers isconfigured for processing a via hole.
 61. A wafer processing apparatuscomprising: a transfer chamber, wherein the transfer chamber isexhaustible; a plurality of vacuum processing chambers, wherein each ofthe plurality of vacuum processing chambers is connectable to thetransfer chamber; and a load lock chamber connectable to the transferchamber for facilitating transfer of a wafer to and from the transferchamber, wherein the load lock chamber is exhaustible and configured forfilling with an oxygen based gas.
 62. The wafer processing apparatus ofclaim 61, wherein the plurality of vacuum processing chambers isconfigured for processing a contact hole.
 63. The wafer processingapparatus of claim 61, wherein the plurality of vacuum processingchambers is configured for processing a via hole.
 64. The waferprocessing apparatus of claim 61, further comprising a first gas feedline connectable to the load lock chamber for feeding an oxygen basedgas into the load lock chamber.
 65. A wafer processing methodcomprising: connecting a plurality of vacuum processing chambers to atransfer chamber; connecting a load lock chamber to the transferchamber, wherein the load lock chamber is exhaustible; connecting afirst gas feed line for feeding an oxygen-based gas to the load lockchamber; forming a predetermined layer on a wafer in one of theplurality of vacuum processing chambers; and oxidizing the predeterminedlayer on the wafer in the load lock chamber.